Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various AO4412 - N-Channel Enhancement Mode Field Effect Transistor

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  AO4412
  N-Channel Enhancement Mode Field Effect Transistor


 General Description                                           Features

 The AO4412 uses advanced trench technology to                 VDS (V) = 30V
 provide excellent RDS(ON) and ultra low gate charge for       ID = 8.5A     (V GS = 10V)
 use has a fast high side switch. The source leads are         RDS(ON) < 26m (VGS = 10V)
 separated to allow a Kelvin connection to the source,         RDS(ON) < 34m (VGS = 4.5V)
 which may be used to bypass the source
 inductance.Standard product AO4412 is Pb-free
 (meets ROHS & Sony 259 specifications). AO4412L
 is a Green Product ordering option. AO4412 and
 AO4412L are electrically identical.




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           SOIC-8



Absolute Maximum Ratings TA=25

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