Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various AO4422 - N-Channel Enhancement Mode Field Effect Transistor

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                                                                                            Jan 2003



  AO4422
  N-Channel Enhancement Mode Field Effect Transistor


 General Description                                           Features

 The AO4422 uses advanced trench technology to                 VDS (V) = 30V
 provide excellent RDS(ON) and low gate charge. This           ID = 11A
 device is suitable for use as a load switch or in PWM         RDS(ON) < 15m (VGS = 10V)
 applications. The source leads are separated to allow         RDS(ON) < 24m (VGS = 4.5V)
 a Kelvin connection to the source, which may be
 used to bypass the source inductance.




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           SOIC-8



Absolute Maximum Ratings TA=25

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