Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various SI4425BDY - P-Channel 30-V (D-S) MOSFET
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Si4425BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
D Advanced High Cell Density
VDS (V) rDS(on) (W) ID (A) Process
Pb-free
0.012 @ VGS = -10 V -11.4 APPLICATIONS Available
-30
0.019 @ VGS = -4.5 V -9.1 D Load Switches
- Notebook PCs
- Desktop PCs
S
SO-8
S 1 8 D G
S 2 7 D
S 3 6 D
G 4 5 D
D
Top View
P-Channel MOSFET
Ordering Information: Si4425BDY
Si4425BDY--T1 (with Tape and Reel)
Si4425BDY--E3 (Lead (Pb)-Free)
Si4425BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS "20
TA = 25_C -11.4 -8.8
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C -9.1 -7.0
A
Pulsed Drain Current IDM -50
continuous Source Current (Diode Conduction)a IS -2.1 -1.3
TA = 25_C 2.5 1.5
Maximum Power Dissipationa PD W
TA = 70_C 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 40 50
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 70 85 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 18
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72000 www.vishay.com
S-50366--Rev. D, 28-Feb-05 1
Si4425BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -1.0 -3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = -30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = -30 V, VGS = 0 V, TJ = 55_C -5
On-State Drain Currenta ID(on) VDS v -5 V, VGS = -10 V -50 A
VGS = -10 V, ID = -11.4 A 0.010 0.012
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = -4.5 V, ID = -9.1 A 0.015 0.019
Forward Transconductancea gfs VDS = -15 V, ID = -11.4 A 29 S
Diode Forward Voltagea VSD IS = -2.5 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Qg 64 100
Gate-Source Charge Qgs ,
VDS = -15 V, VGS = -10 V, ID = -11.4 A
, 11 nC
Gate-Drain Charge Qgd 17
Turn-On Delay Time td(on) 15 25
Rise Time tr VDD = -15 V, RL = 15 W 13 20
Turn-Off Delay Time td(off) ID ^ -1 A, VGEN = -10 V, RG = 6 W 100 150 ns
Fall Time tf 53 80
Source-Drain Reverse Recovery Time trr IF = -2.5 A, di/dt = 100 A/ms 41 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V
40 40
4V
I D - Drain Current (A)
I D - Drain Current (A)
30 30
20 20
TC = 125_C
10 10
25_C
3V -55_C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72000
2 S-50366--Rev. D, 28-Feb-05
Si4425BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.025 5000
r DS(on) - On-Resistance ( W )
0.020 4000
C - Capacitance (pF)
VGS = 4.5 V Ciss
0.015 3000
VGS = 10 V
0.010 2000
Coss
0.005 1000
Crss
0.000 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 12 A ID = 12 A
rDS(on) - On-Resiistance
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.05
0.04
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C ID = 12 A
10 0.03
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72000 www.vishay.com
S-50366--Rev. D, 28-Feb-05 3
Si4425BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 30
0.6 25
ID = 250 mA
20
V GS(th) Variance (V)
0.4
Power (W)
0.2 15
0.0 10
-0.2 5
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100
600
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
*rDS(on) Limited IDM Limited
P(t) = 0.0001
10
P(t) = 0.001
I D - Drain Current (A)
P(t) = 0.01
1 ID(on)
Limited
P(t) = 0.1
P(t) = 1
TA = 25_C
0.1 Single Pulse P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72000
4 S-50366--Rev. D, 28-Feb-05
Si4425BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72000.
Document Number: 72000 www.vishay.com
S-50366--Rev. D, 28-Feb-05 5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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