Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various SI4431ADY - P - Channel 30-V (D-S) MOSFET
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download SI4431ADY - P - Channel 30-V (D-S) MOSFET documenatation <<
Text preview - extract from the document
Si4431ADY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A)
0.030 @ VGS = - 10 V - 7.2
- 30
0.052 @ VGS = - 4.5 V - 5.5
S
SO-8
S 1 8 D
G
S 2 7 D
S 3 6 D
G 4 5 D
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS "20
TA = 25_C - 7.2 - 5.3
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C - 5.8 - 4.2
A
Pulsed Drain Current IDM - 30
continuous Source Current (Diode Conduction)a IS - 2.1 - 1.3
TA = 25_C 2.5 1.35
Maximum Power Dissipationa PD W
TA = 70_C 1.6 0.87
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 35 50
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 75 92 _C/W
C/W
Maximum Junction-to-Foot Steady State RthJF 17 25
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71803 www.vishay.com
S-95713--Rev. C, 18-Feb-02 1
Si4431ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = - 24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 24 V, VGS = 0 V, TJ = 70_C - 10
VDS = - 5 V, VGS = - 10 V - 30 A
On State Drain Currenta
On-State ID( )
D(on)
VDS = - 5 V, VGS = - 4.5 V -7 A
VGS = - 10 V, ID = - 7.2 A 0.024 0.030
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = - 4.5 V, ID = - 5.0 A 0.040 0.052
Forward Transconductancea gfs VDS = - 15 V, ID = - 7.2 A 14 S
Diode Forward Voltagea VSD IS = - 2.1 A, VGS = 0 V - 0.78 - 1.1 V
Dynamicb
Total Gate Charge Qg 12 20
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 7.2 A 4.7 nC
Gate-Drain Charge Qgd 3.7
Turn-On Delay Time td(on) 12 20
Rise Time tr 15 20
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 40 60 ns
Fall Time tf 20 25
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 30 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 30
VGS = 10 thru 5 V
24 24
I D - Drain Current (A)
I D - Drain Current (A)
4V
18 18
12 12
TC = 125_C
6 6
3V
25_C
- 55_C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71803
2 S-95713--Rev. C, 18-Feb-02
Si4431ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.10 2000
r DS(on) - On-Resistance ( W )
Ciss
0.08 1600
C - Capacitance (pF)
0.06 1200
VGS = 4.5 V
0.04 800
VGS = 10 V
Coss
0.02 400
Crss
0.00 0
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 7.2 A ID = 7.2 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 3 6 9 12 15 18 21 24 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.20
TJ = 150_C
r DS(on) - On-Resistance ( W )
0.15
I S - Source Current (A)
10
ID = 7.2 A
0.10
TJ = 25_C
0.05
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71803 www.vishay.com
S-95713--Rev. C, 18-Feb-02 3
Si4431ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 40
0.4 32
ID = 250 mA
V GS(th) Variance (V)
24
Power (W)
0.2
0.0 16
- 0.2 8
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 75_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71803
4 S-95713--Rev. C, 18-Feb-02
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo