Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various SI4800 - N-channel enhancement mode field-effect transistor

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                                           Si4800
                                           N-channel enhancement mode field-effect transistor
                             M3D315        Rev. 01 -- 13 July 2001                                            Product data




1. Description
                                      N-channel enhancement mode field-effect transistor in a plastic package using
                                      TrenchMOSTM1 technology.

                                      Product availability:
                                          Si4800 in SOT96-1 (SO8).


2. Features
                                      s Low on-state resistance
                                      s Fast switching
                                      s TrenchMOSTM technology.


3. Applications
                                      s    DC to DC convertors
                                      s    DC motor control
                         c
                                      s    Lithium-ion battery applications
                     c

                                      s    Notebook PC
                                      s    Portable equipment applications.


4. Pinning information
Table 1:    Pinning - SOT96-1, simplified outline and symbol
 Pin             Description                                  Simplified outline        Symbol
 1,2,3           source (s)
                                                                    8           5                         d
 4               gate (g)
 5,6,7,8         drain (d)
                                                                                                    g

                                                                    1           4
                                                                    Top view   MBK187            MBB076   s

                                                                   SOT96-1 (SO8)




1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                                      Si4800
                                                                  N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                    Conditions                                           Typ               Max                Unit
VDS              drain-source voltage (DC)          Tj = 25 to 150 

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