Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various SI4835BDY - P-Channel 30-V (D-S) MOSFET
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Si4835BDY
New Product Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) D Advanced High Cell Density Process
0.018 @ VGS = - 10 V - 9.6 APPLICATIONS
- 30
0.030 @ VGS = - 4.5 V - 7.5 D Load Switches
- Notebook PCs
- Desktop PCs
S
SO-8
S 1 8 D
G
S 2 7 D
S 3 6 D
G 4 5 D
D
Top View
P-Channel MOSFET
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS "25
TA = 25_C - 9.6 - 7.4
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C - 7.7 - 5.9
A
Pulsed Drain Current IDM - 50
continuous Source Current (Diode Conduction)a IS - 2.1 - 1.3
TA = 25_C 2.5 1.5
Maximum Power Dissipationa PD W
TA = 70_C 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 39 50
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 70 85 _C/W
C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72029 www.vishay.com
S-31062--Rev. C, 26-May-03 1
Si4835BDY
Vishay Siliconix New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 - 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "25 V "100 nA
VDS = - 24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 24 V, VGS = 0 V, TJ = 55_C -5
On-State Drain Currenta ID(on) VDS v - 5 V, VGS = - 10 V - 50 A
VGS = - 10 V, ID = - 9.6 A 0.014 0.018
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = - 4.5 V, ID = - 7.5 A 0.023 0.030
Forward Transconductancea gfs VDS = - 15 V, ID = - 9.6 A 30 S
Diode Forward Voltagea VSD IS = - 2.1 A, VGS = 0 V - 0.8 - 1.2 V
Dynamicb
Total Gate Charge Qg 25 37
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 9.6 A 6.5 nC
Gate-Drain Charge Qgd 12.5
Gate Resistance Rg 1.0 2.9 4.9 W
Turn-On Delay Time td(on) 15 25
Rise Time tr 13 20
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 60 100 ns
Fall Time tf 45 70
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 45 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V TC = - 55_C
25_C
40 40
4V
125_C
I D - Drain Current (A)
I D - Drain Current (A)
30 30
20 20
10 10
3V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72029
2 S-31062--Rev. C, 26-May-03
Si4835BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.05 3200
r DS(on) - On-Resistance ( W )
0.04
C - Capacitance (pF)
2400
Ciss
0.03
VGS = 4.5 V
1600
0.02
VGS = 10 V
800 Coss
0.01
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 9.6 A ID = 9.6 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
60 0.05
0.04
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
ID = 9.6 A
TJ = 150_C 0.03
10
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72029 www.vishay.com
S-31062--Rev. C, 26-May-03 3
Si4835BDY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 80
0.4
60
V GS(th) Variance (V)
ID = 250 mA
Power (W)
0.2
40
0.0
20
- 0.2
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
IDM Limited
rDS(on) Limited
P(t) = 0.0001
10
I D - Drain Current (A)
P(t) = 0.001
ID(on) P(t) = 0.01
1
Limited
P(t) = 0.1
P(t) = 1
TA = 25_C
0.1 Single Pulse P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72029
4 S-31062--Rev. C, 26-May-03
Si4835BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72029 www.vishay.com
S-31062--Rev. C, 26-May-03 5
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