Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Various SI4856DY - N-Channel 30-V MOSFET
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Si4856DY
New Product Vishay Siliconix
N-Channel 30-V MOSFET
FEATURES
D TrenchFETr Power MOSFETS
PRODUCT SUMMARY D 100% RG Tested
VDS (V) rDS(on) (W) ID (A) APPLICATIONS
0.006 @ VGS = 10 V 17 D Buck Converter
30
0.0085 @ VGS = 4.5 V 14 D Synchronous Rectifier
- Secondary Rectifier
D
SO-8
S 1 8 D
S 2 7 D
G
S 3 6 D
G 4 5 D
Top View S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 17 12
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 14 9
A
Pulsed Drain Current IDM "50
Continuous Source Current (Diode Conduction)a IS 2.7 1.40
TA = 25_C 3.0 1.6
Maximum Power Dissipationa PD W
TA = 70_C 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 34 41
Maximum Junction to Ambient (MOSFET)a
Junction-to-Ambient RthJA
Steady State 67 80 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 19
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71881 www.vishay.com
S-03662--Rev. B, 03-Apr-03 1
Si4856DY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 24 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 24 V, VGS = 0 V, TJ = 70_C 5
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 40 A
VGS = 10 V, ID = 17 A 0.0046 0.006
Drain-Source On-State Resistancea rDS(on) W
VGS = 4.5 V, ID = 14 A 0.0066 0.0085
Forward Transconductancea gfs VDS = 15 V, ID = 17 A 57 S
Diode Forward Voltagea VSD IS = 2.7 A, VGS = 0 V 0.72 1.1 V
Dynamicb
Total Gate Charge Qg 21 30
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 17 A 8 nC
Gate-Drain Charge Qgd 7.2
Gate-Resistance RG 0.5 1.5 2.6 W
Turn-On Delay Time td(on) 16 25
Rise Time tr VDD = 15 V, RL = 15 W 10 20
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 57 90 ns
Fall Time tf 16 25
Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 A/ms 40 70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
60 60
VGS = 10 thru 4 V
50 50
I D - Drain Current (A)
I D - Drain Current (A)
40 40
30 30
20 20 TC = 125_C
3V
10 10 25_C
- 55_C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71881
2 S-03662--Rev. B, 03-Apr-03
Si4856DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.010 3500
Ciss
r DS(on) - On-Resistance ( W )
0.008 2800
VGS = 4.5 V
C - Capacitance (pF)
0.006 2100
VGS = 10 V
0.004 1400
Coss
0.002 700
Crss
0.000 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
6 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
5 ID = 17 A ID = 17 A
1.4
r DS(on) - On-Resistance (W)
4
(Normalized)
1.2
3
1.0
2
0.8
1
0 0.6
0 6 12 18 24 30 - 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.025
0.020
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.015
0.010
TJ = 25_C
ID = 17 A
0.005
1 0.000
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71881 www.vishay.com
S-03662--Rev. B, 03-Apr-03 3
Si4856DY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 200
ID = 250 mA
0.2 160
V GS(th) Variance (V)
- 0.0
Power (W)
120
- 0.2
80
- 0.4
40
- 0.6
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
Limited by 1 ms
rDS(on)
10
I D - Drain Current (A)
10 ms
1
100 ms
1s
TC = 25_C
0.1 10 s
Single Pulse
dc
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 67_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71881
4 S-03662--Rev. B, 03-Apr-03
Si4856DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1 Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71881 www.vishay.com
S-03662--Rev. B, 03-Apr-03 5
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