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Si9936BDY
New Product Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.035 @ VGS = 10 V 6.0
30
0.052 @ VGS = 4.5 V 4.9
D1 D2
SO-8
S1 1 8 D1
G1 2 7 D1
G1 G2
S2 3 6 D2
G2 4 5 D2
Top View
S1 S2
Ordering Information: Si9936BDY--E3
Si9936BDY-T1--E3 (with Tape and Reel) N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 6.0 4.5
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 4.8 3.6
A
Pulsed Drain Current IDM 40
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
TA = 25_C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70_C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 53 62.5
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 92 110 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72521 www.vishay.com
S-32411--Rev. B, 24-Nov-03 1
Si9936BDY
Vishay Siliconix New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 5
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 40 A
VGS = 10 V, ID = 6 A 0.028 0.035
Drain-Source On-State Resistancea rDS(on) W
VGS = 4.5 V, ID = 4.9 A 0.041 0.052
Forward Transconductancea gfs VDS = 15 V, ID = 6 A 12 S
Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg 8.6 13
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 6 A 1.8 nC
Gate-Drain Charge Qgd 1.5
Gate Resistance Rg f = 1 MHz 2.8 W
Turn-On Delay Time td(on) 10 15
Rise Time tr 15 25
VDD = 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 25 40 ns
Fall Time tf 10 15
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms 20 40
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 6 V TC = -55_C
35 35
5V 25_C
30 30
I D - Drain Current (A)
I D - Drain Current (A)
25 25
125_C
20 4V 20
15 15
10 10
5 5
3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72521
2 S-32411--Rev. B, 24-Nov-03
Si9936BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.10 800
700
r DS(on) - On-Resistance ( W )
0.08
C - Capacitance (pF)
600
Ciss
500
0.06
400
VGS = 4.5 V
0.04
300
VGS = 10 V
200
0.02 Coss
100 Crss
0.00 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 6 A ID = 6 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
40 0.10
0.08
r DS(on) - On-Resistance ( W )
TJ = 150_C
I S - Source Current (A)
10 0.06
ID = 6 A
0.04
TJ = 25_C
0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72521 www.vishay.com
S-32411--Rev. B, 24-Nov-03 3
Si9936BDY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 40
ID = 250 mA
V GS(th) Variance (V)
-0.0
30
Power (W)
-0.2
20
-0.4
10
-0.6
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Safe Operating Area
100
IDM Limited
rDS(on) Limited
10 P(t) = 0.0001
I D - Drain Current (A)
P(t) = 0.001
1
ID(on)
P(t) = 0.01
Limited
P(t) = 0.1
TA = 25_C P(t) = 1
0.1 Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 92_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72521
4 S-32411--Rev. B, 24-Nov-03
Si9936BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72521 www.vishay.com
S-32411--Rev. B, 24-Nov-03 5
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