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                                                                                    STP3NB60
                                                                                  STP3NB60FP
                                          N - CHANNEL ENHANCEMENT MODE
                                                    PowerMESHTM MOSFET
         TYPE            V DSS      R DS(on)        ID
STP3NB60                 600 V      <3.6           3.3 A
STP3NB60FP               600 V      < 3.6          2.2 A
s    TYPICAL RDS(on) = 3.3 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED
                                                                                      3                             3
                                                                                  2                             2
DESCRIPTION                                                                   1                             1
Using the latest high voltage MESH OVERLAYTM
process, SGS-Thomson has designed an                                 TO-220                      TO-220FP
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge                  INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
    Symbol                              Parameter                                     Value                 Uni t
                                                                       STP3NB60              STP3NB60FP
      V DS       Drain-source Voltage (V GS = 0)                                          600                   V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                        600                   V
      V GS       Gate-source Voltage                                                      

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